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NSC KIPT / Institute of Solid State Physics Materials and Technology
DEPARTMENT OF PURE METALS, PHYSICS OF METALS AND TECHNOLOGY OF NEW MATERIALS
SCIENTIFIC-RESEARCHING LABORATORY OF SEMICONDUCTOR MATERIALS
Computer simulation of thermal conditions of single crystals growth,
their electrophysical properties as well as metals refinement
The new means to grow GaAs
single crystals by Kyropoulos method was found with computer simulation
technique.
Quantitative explorations of the processing
methods to improve thermal regime of GaAs and yttrium aluminum garnet
crystals growth in Czochralsky method have been carried out.
Electro-physical properties of GaAs, CdTe
and CdZnTe depending on structure defects content have been investigated
by computer simulation method.
Separation factors and distribution
coefficients of impurity elements assisted during distillation and
crystallisation of metals were determined with calculation methods.
